? semiconductor components industries, llc, 2016 january, 2016 ? rev. 2 1 publication order number: ngtb40n60l2w/d NGTB40N60L2WG igbt this insulated gate bipolar transistor (igbt) features a robust and cost effective field stop (fs) trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. features ? extremely efficient trench with field stop technology ? t jmax = 175 c ? soft fast reverse recovery diode ? optimized for low v cesat ? 5 s short?circuit capability ? this is a pb?free device typical applications ? motor drive inverters ? industrial switching ? welding absolute maximum ratings rating symbol value unit collector?emitter voltage v ces 600 v collector current @ t c = 25 c @ t c = 100 c i c 80 40 a diode forward current @ t c = 25 c @ t c = 100 c i f 80 40 a diode pulsed current t pulse limited by t j max i fm 160 a pulsed collector current, t pulse limited by t jmax i cm 160 a short?circuit withstand time v ge = 15 v, v ce = 400 v, t j +150 c t sc 5 s gate?emitter voltage v ge 20 v v transient gate?emitter voltage (t pulse = 5 s, d < 0.10) 30 power dissipation @ t c = 25 c @ t c = 100 c p d 417 208 w operating junction temperature range t j ?55 to +175 c storage temperature range t stg ?55 to +175 c lead temperature for soldering, 1/8? from case for 5 seconds t sld 260 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. to?247 case 340al c g 40 a, 600 v v cesat = 1.65 v e off = 0.28 mj e device package shipping ordering information NGTB40N60L2WG t o?247 (pb?free) 30 units / rail www. onsemi.com a = assembly location y = year ww = work week g = pb?free package marking diagram 40n60l2 aywwg g e c
NGTB40N60L2WG www. onsemi.com 2 thermal characteristics rating symbol value unit thermal resistance junction?to?case, for igbt r jc 0.36 c/w thermal resistance junction?to?case, for diode r jc 1.00 c/w thermal resistance junction?to?ambient r ja 40 c/w electrical characteristics (t j = 25 c unless otherwise specified) parameter test conditions symbol min typ max unit static characteristic collector?emitter breakdown voltage, gate?emitter short?circuited v ge = 0 v, i c = 500 a v (br)ces 600 ? ? v collector?emitter saturation voltage v ge = 15 v, i c = 40 a v ge = 15 v, i c = 40 a, t j = 175 c v cesat ? ? 1.65 1.90 1.90 ? v gate?emitter threshold voltage v ge = v ce , i c = 350 a v ge(th) 4.5 5.8 6.5 v collector?emitter cut?off current, gate? emitter short?circuited v ge = 0 v, v ce = 600 v v ge = 0 v, v ce = 600 v, t j = 175 c i ces ? ? ? 5.0 0.5 ? ma gate leakage current, collector?emitter short?circuited v ge = 20 v , v ce = 0 v i ges ? ? 200 na dynamic characteristic input capacitance v ce = 20 v, v ge = 0 v, f = 1 mhz c ies ? 5286 ? pf output capacitance c oes ? 213 ? reverse transfer capacitance c res ? 147 ? gate charge total v ce = 480 v, i c = 40 a, v ge = 15 v q g ? 228 ? nc gate to emitter charge q ge ? 50 ? gate to collector charge q gc ? 115 ? switching characteristic, inductive load turn?on delay time t j = 25 c v cc = 400 v, i c = 40 a r g = 10 v ge = 0 v/ 15 v t d(on) ? 98 ? ns rise time t r ? 42 ? turn?off delay time t d(off) ? 213 ? fall time t f ? 60 ? turn?on switching loss e on ? 1.17 ? mj turn?off switching loss e off ? 0.28 ? total switching loss e ts ? 1.45 ? turn?on delay time t j = 150 c v cc = 400 v, i c = 40 a r g = 10 v ge = 0 v/ 15 v t d(on) ? 98 ? ns rise time t r ? 44 ? turn?off delay time t d(off) ? 220 ? fall time t f ? 88 ? turn?on switching loss e on ? 1.45 ? mj turn?off switching loss e off ? 0.68 ? total switching loss e ts ? 2.13 ? diode characteristic forward voltage v ge = 0 v, i f = 40 a v ge = 0 v, i f = 40 a, t j = 175 c v f ? ? 2.40 2.58 3.00 ? v reverse recovery time t j = 25 c i f = 40 a, v r = 200 v di f /dt = 200 a/ s t rr ? 73 ? ns reverse recovery charge q rr ? 282 ? nc reverse recovery current i rrm ? 6.7 ? a reverse recovery time t j = 175 c i f = 40 a, v r = 200 v di f /dt = 200 a/ s t rr ? 160 ? ns reverse recovery charge q rr ? 912 ? nc reverse recovery current i rrm ? 8.6 ? a product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions.
NGTB40N60L2WG www. onsemi.com 3 typical characteristics figure 1. output characteristics figure 2. output characteristics v ce , collector?emitter voltage (v) v ce , collector?emitter voltage (v) 5 4 3 2 1 0 figure 3. output characteristics figure 4. typical transfer characteristics v ce , collector?emitter voltage (v) v ge , gate?emitter voltage (v) 14 8 0 i c , collector current (a) i c , collector current (a) v ge = 20 to 15 v t j = 25 c 10 v 9 v 8 v 7 v 5 4 3 2 1 0 i c , collector current (a) v ge = 20 to 17 v t j = 150 c 10 v 9 v 8 v 7 v i c , collector current (a) v ge = 20 to 15 v t j = ?55 c 10 v 9 v t j = 25 c t j = 150 c 11 v 11 v 7 v ? 8 v 8 7 6 11 v 678 5 4 3 2 1 08 7 6 2 6 4101216 13 v 13 v 140 120 100 80 60 40 20 0 15 v 13 v 160 140 120 100 80 60 40 20 0 160 140 120 100 80 60 40 20 0 160 140 120 100 80 60 40 20 0 160 figure 5. v ce(sat) vs. t j t j , junction temperature ( c) 3.00 v ce , collector?emitter voltage (v) 75 50 0 ?25 ?50 ?75 200 175 100 i c = 60 a i c = 40 a i c = 20 a 25 125 150 figure 6. typical capacitance v ce , collector?emitter voltage (v) 100 70 50 10 0 10 100 1000 10,000 c, capacitance (pf) c ies c oes c res 20 30 40 60 90 80 t j = 25 c 2.75 2.50 2.25 2.00 1.75 1.50 1.25 1.00 0.75
NGTB40N60L2WG www. onsemi.com 4 typical characteristics figure 7. diode forward characteristics v f , forward voltage (v) 3.0 2.5 2.0 1.5 1.0 0.5 0 110 i f , forward current (a) t j = 25 c t j = 150 c figure 8. typical gate charge q g , gate charge (nc) 100 50 0 v ge , gate?emitter voltage (v) 250 v ce = 480 v v ge = 15 v i c = 40 a 20 100 90 80 70 60 50 40 30 20 10 0 3.5 4.0 18 16 14 12 10 8 6 4 2 0 150 200 figure 9. switching loss vs. temperature t j , junction temperature ( c) 140 120 100 80 60 40 20 0 switching loss (mj) 160 v ce = 400 v v ge = 15 v i c = 40 a rg = 10 1.75 e on figure 10. switching time vs. temperature t j , junction temperature ( c) 140 120 100 80 60 40 20 0 10 100 1000 switching time (ns) 160 v ce = 400 v v ge = 15 v i c = 40 a rg = 10 t f t d(off) figure 11. switching loss vs. i c i c , collector current (a) 15 switching loss (mj) 4.5 75 65 35 v ce = 400 v v ge = 15 v t j = 150 c rg = 10 e off figure 12. switching time vs. i c i c , collector current (a) switching time (ns) v ce = 400 v v ge = 15 v t j = 150 c rg = 10 10 100 1000 e off 1.5 1.25 1 0.75 0.5 0.25 0 t d(on) t r e on 25 45 55 t f t d(off) t d(on) t r 4 3.5 3 2.5 2 1.5 1 0.5 0 585 15 75 65 35 25 45 55 585
NGTB40N60L2WG www. onsemi.com 5 typical characteristics figure 13. switching loss vs. r g r g , gate resistor ( ) 45 35 25 15 5 6 switching loss (mj) 55 65 v ce = 400 v v ge = 15 v t j = 150 c i c = 35 a 75 e off v ce = 400 v v ge = 15 v t j = 150 c i c = 40 a figure 14. switching time vs. r g r g , gate resistor ( ) 45 35 25 15 5 10000 switching time (ns) 55 65 75 85 figure 15. switching loss vs. v ce v ce , collector?emitter voltage (v) 450 400 350 300 250 switching loss (mj) 500 550 600 i c = 40 a v ge = 15 v t j = 150 c rg = 10 v ce , collector?emitter voltage (v) switching time (ns) 1000 figure 16. switching time vs. v ce i c = 40 a v ge = 15 v t j = 150 c rg = 10 figure 17. safe operating area v ce , collector?emitter voltage (v) i c , collector current (a) 1000 100 10 1 0.1 1 10 100 1000 50 s 100 s 1 ms dc operation single nonrepetitive pulse t c = 25 c curves must be derated linearly with increase in temperature figure 18. reverse bias safe operating area v ce , collector?emitter voltage (v) i c , collector current (a) 1000 100 10 1 1 10 100 1000 v ge = 15 v, t c = 125 c 1000 100 10 100 10 2.5 325 275 225 175 475 525 575 375 425 e on t f t d(off) t d(on) t r 200 150 e off e on t f t d(off) t d(on) t r 5.5 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 2 1.5 1 0.5 0
NGTB40N60L2WG www. onsemi.com 6 typical characteristics figure 19. t rr vs. di f /dt (v r = 400 v) di f /dt, diode current slope (a/ s) 500 300 100 160 t rr , reverse recovery time (ns) 700 900 t j = 175 c, i f = 40 a 1100 figure 20. q rr vs. di f /dt (v r = 400 v) di f /dt, diode current slope (a/ s) 500 300 100 2.0 q rr , reverse recovery charge ( c) 700 900 1100 figure 21. i rm vs. di f /dt (v r = 400 v) di f /dt, diode current slope (a/ s) 700 500 300 i rm , reverse recovery current (a) 900 1100 t j , junction temperature ( c) v f , forward voltage (v) 3.5 figure 22. v f vs. t j 1.0 0.5 0 2.5 1.0 140 120 100 80 60 40 30 25 ?25 ?75 125 175 75 100 20 10 0 t j = 25 c, i f = 40 a 1.5 t j = 175 c, i f = 40 a t j = 25 c, i f = 40 a t j = 175 c, i f = 40 a t j = 25 c, i f = 40 a 1.5 2.0 3.0 i f = 30 a i f = 60 a i f = 40 a ?50 0 50 100 150 200
NGTB40N60L2WG www. onsemi.com 7 typical characteristics 1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 on?pulse width (sec) square?wave peak r(t) ( c/w) figure 23. igbt die self?heating square?wave duty cycle transient thermal response 0.1 0.01 0.01 0.0001 junction c 1 c 2 r 1 r 2 duty factor = t 1 /t 2 peak t j = p dm x z jc + t c case c n r n r i ( c/w) c i (j/ c) 0.0424 0.0269 0.0344 0.0858 0.1370 0.0024 0.0117 0.0291 0.0368 0.0730 0.0287 1.1036 50% duty cycle 20% 10% 5% 2% single pulse r ja = 0.36 1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 on?pulse width (sec) square?wave peak r(t) ( c/w) 0.1 0.01 50% duty cycle 20% 10% 5% 2% single pulse junction c 1 c 2 r 1 r 2 duty factor = t 1 /t 2 peak t j = p dm x z jc + t c case c n r n r i ( c/w) c i (j/ c) 0.015573 0.000064 0.020609 0.022302 0.051471 0.093296 0.196754 0.133748 0.176718 0.249274 0.037835 0.000485 0.001418 0.001943 0.003390 0.005082 0.023644 0.056587 0.126860 2.643021 r ja = 1.00 figure 24. diode die self?heating square?wave duty cycle transient thermal response
NGTB40N60L2WG www. onsemi.com 8 package dimensions to?247 case 340al issue a e2 l1 d l b4 b2 b e 0.25 m ba m c a1 a 123 b e 2x 3x 0.635 m ba m a s p seating plane notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. slot required, notch may be rounded. 4. dimensions d and e do not include mold flash. mold flash shall not exceed 0.13 per side. these dimensions are measured at the outermost extreme of the plastic body. 5. lead finish is uncontrolled in the region defined by l1. 6. ? p shall have a maximum draft angle of 1.5 to the top of the part with a maximum diameter of 3.91. 7. dimension a1 to be measured in the region defined by l1. dim min max millimeters d 20.30 21.40 e 15.50 16.25 a 4.70 5.30 b 1.00 1.40 b2 1.65 2.35 e 5.45 bsc a1 2.20 2.60 c 0.40 0.80 l 19.80 20.80 q 5.40 6.20 e2 4.32 5.49 l1 3.50 4.50 p 3.55 3.65 s 6.15 bsc b4 2.60 3.40 note 6 4 note 7 q note 4 note 3 note 5 e2/2 note 4 on semiconductor and the are registered trademarks of semiconductor components industries, llc (scillc) or its subsidia ries in the united states and/or other countries. scillc owns the rights to a number of pa tents, trademarks, copyrights, trade secret s, and other intellectual property. a listin g of scillc?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any product s herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any part icular purpose, nor does sci llc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typi cal? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating param eters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgic al implant into the body, or other applications intended to s upport or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer s hall indemnify and hold scillc and its officers , employees, subsidiaries, affiliates, and dist ributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufac ture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 ngtb40n60l2w/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative
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